| 发明名称 |
ELECTRONIC STRUCTURE HAVING AT LEAST ONE METAL GROWTH LAYER AND METHOD FOR PRODUCING AN ELECTRONIC STRUCTURE |
| 摘要 |
Various embodiments may relate to an electronic structure, including at least one organic layer, at least one metal growth layer grown onto the organic layer, and at least one metal layer grown on the metal growth layer. The at least one metal growth layer contains germanium. Various embodiments further relate to a method for producing the electronic structure. |
| 申请公布号 |
US2015311471(A1) |
申请公布日期 |
2015.10.29 |
| 申请号 |
US201314386016 |
申请日期 |
2013.03.19 |
| 申请人 |
OSRAM Opto Semiconductors GmbH |
发明人 |
Lang Erwin;Schwamb Philipp;Hartmann David;Schmid Guenter;Eder Florian;Szyszkowski Sabine;Sarfert Wiebke |
| 分类号 |
H01L51/52;H01L51/56 |
主分类号 |
H01L51/52 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electronic structure, comprising:
at least one organic layer; at least one metal growth layer grown onto the organic layer; and at least one metal layer grown on the metal growth layer; wherein the at least one metal growth layer contains germanium. |
| 地址 |
Regensburg DE |
