STRUCTURE AND METHOD FOR FINFET DEVICE

摘要

The present disclosure provides a fin-like field-effect transistor (FinFET) device. The device includes a substrate having a first region, a second region and a third region. The first region includes a first fin structure, a first high-k (HK)/metal gate (MG) stack wrapping over an upper portion of the first fin structure and a first source/drain features, separated by the first HK/MG stack, over the recessed first fin structure. The second region includes a second fin structure, the first source/drain features over a portion of the recessed second fin structure. The third region includes a dummy gate stack over the second fin structure and the two first regions are separated by the second region, or by the third region.

主权项

1. A fin-like field-effect transistor (FinFET) device comprising:
a substrate having two first regions, a second region and a third region; wherein each of the first regions includes:
a first fin structure having a first semiconductor material layer as its upper portion, a second semiconductor material layer, with a semiconductor oxide feature at its outer layer, as its lower portion;a first high-k (HK)/metal gate (MG) stack over the substrate, including wrapping over an upper portion of the first fin structure; andfirst source/drain features, separated by the first HK/MG stack, over the first fin structure; wherein the second region includes:
a second fin structure having the first semiconductor material layer as its upper portion, the second semiconductor material layer as its bottom portion;the first source/drain features over a portion of the second fin structure, which has a recessed upper portion; and wherein the third region includes: a dummy gate stack over the second fin structure; and wherein the two first regions are separated by the second region, or by the third region.