| 发明名称 |
ITC-IGBT AND MANUFACTURING METHOD THEREFOR |
| 摘要 |
An ITC-IGBT and a manufacturing method therefor. The method comprises: providing a heavily doped substrate, forming a GexSi1-x/Si multi-quantum well strained super lattice layer on the surface of the heavily doped substrate, and forming a lightly doped layer on the surface of the GexSi1-x/Si multi-quantum well strained super lattice layer. The GexSi1-x/Si multi-quantum well strained super lattice layer is formed on the surface of the heavily doped substrate through one step, simplifying the production process of the ITC-IGBT. |
| 申请公布号 |
US2015311327(A1) |
申请公布日期 |
2015.10.29 |
| 申请号 |
US201214648698 |
申请日期 |
2012.12.06 |
| 申请人 |
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES ;SHANGHAI LIANXING ELECTRONICS CO., LTD ;JIANGSU CAS-IGBT TECHNOLOGY CO., LTD |
发明人 |
WU Zhenxing;ZHU Yangjun;TIAN Xiaoli;LU Shuojin |
| 分类号 |
H01L29/739;H01L29/15;H01L21/324;H01L21/02;H01L21/306;H01L29/36;H01L29/08;H01L29/66;H01L21/265 |
主分类号 |
H01L29/739 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating an ITC-IGBT, comprising:
preparing a heavily doped substrate; forming a GexSi1-x/Si multiple quantum well strained superlattice layer on a surface of the heavily doped substrate by means of the molecular beam epitaxy process; and forming a lightly doped layer on a surface of the GexSi1-x/Si multiple quantum well strained superlattice layer. |
| 地址 |
Beijing CN |
