| 发明名称 |
MEMORY DEVICE |
| 摘要 |
Provided is a memory device, including a memory element on a substrate; a protection insulating pattern covering a side surface of the memory element and exposing a top surface of the memory element; an upper mold layer on the protection insulating pattern; and a bit line on and connected to the memory element, the bit line extending in a first direction, the protection insulating pattern including a first protection insulating pattern covering a lower side surface of the memory element; and a second protection insulating pattern covering an upper side surface of the memory element and including a different material from the first protection insulating pattern. |
| 申请公布号 |
US2015311253(A1) |
申请公布日期 |
2015.10.29 |
| 申请号 |
US201514602490 |
申请日期 |
2015.01.22 |
| 申请人 |
CHOI Young-Seok;SEO Jaehun;YANG Hyun-woo;PARK Jongchul |
发明人 |
CHOI Young-Seok;SEO Jaehun;YANG Hyun-woo;PARK Jongchul |
| 分类号 |
H01L27/22;H01L43/08;H01L43/02 |
主分类号 |
H01L27/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device, comprising:
a memory element on a substrate; a protection insulating pattern covering a side surface of the memory element and exposing a top surface of the memory element; an upper mold layer on the protection insulating pattern; and a bit line on and connected to the memory element, the bit line extending in a first direction, the protection insulating pattern including: a first protection insulating pattern covering a lower side surface of the memory element; and a second protection insulating pattern covering an upper side surface of the memory element and including a different material from the first protection insulating pattern. |
| 地址 |
Yongin-si KR |
