发明名称 IMAGE SENSOR WITH DUAL LAYER PHOTODIODE STRUCTURE
摘要 An image system with a dual layer photodiode structure is provided for processing color images. In particular, the image system can include an image sensor that can include photodiodes with a dual layer photodiode structure. In some embodiments, the dual layer photodiode can include a first layer of photodiodes (e.g., a bottom layer), an insulation layer disposed on the first layer of photodiodes, and a second layer of photodiodes (e.g., a top layer) disposed on the insulation layer. The first layer of photodiodes can include one or more suitable pixels (e.g., green, blue, clear, luminance, and/or infrared pixels). Likewise, the second layer of photodiodes can include one or more suitable pixels (e.g., green, red, clear, luminance, and/or infrared pixels). An image sensor incorporating dual layer photodiodes can gain light sensitivity with additional clear pixels and maintain luminance information with green pixels.
申请公布号 US2015311242(A1) 申请公布日期 2015.10.29
申请号 US201514793480 申请日期 2015.07.07
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC 发明人 BAI Yingjun;SUN Qun
分类号 H01L27/146;H04N5/33;H04N9/04;H04N5/369 主分类号 H01L27/146
代理机构 代理人
主权项
地址 Phoenix AZ US