THIN FILM TRANSISTOR ARRAY PANEL

摘要

A thin film transistor array panel includes: a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, and a data wire layer disposed on the substrate and including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode. In addition, at least one of the data line, the source electrode or the drain electrode of the data wire layer includes a barrier layer and a main wiring layer disposed on the barrier layer. The main wiring layer includes copper or a copper alloy. Also, the barrier layer includes a metal oxide, and the metal oxide includes zinc.

主权项

1. A thin film transistor array panel comprising:
a gate line disposed on a substrate and including a gate electrode; a gate insulating layer disposed on the gate line; a semiconductor layer including an oxide semiconductor disposed on the gate insulating layer, wherein the semiconductor layer extends in a longitudinal direction and includes a projection which extends toward the gate electrode; and a data line intersecting the gate line; a source electrode connected to the data line; a drain electrode facing the source electrode, and a passivation layer disposed on the data line, the drain electrode and on a portion of the projection of the semiconductor layer disposed between the source electrode and the drain electrode, wherein the data line, the source electrode and the drain electrode each include a barrier layer, a main wiring layer disposed on the barrier layer, and a capping layer disposed on the main wiring layer, wherein the main wiring layer includes a metal or a metal alloy, wherein the barrier layer and the capping layer includes a metal oxide, and wherein the capping layer is in a polycrystalline state.