MILLISECOND ANNEALING IN AMMONIA AMBIENT FOR PRECISE PLACEMENT OF NITROGEN IN THIN FILM STACKS

摘要

Embodiments of the present disclosure relate to methods for processing a substrate. In one embodiment, the method includes forming a dielectric layer over a substrate, wherein the dielectric layer has a dielectric value of about 3.9 or greater, heating the substrate to a first temperature of about 600 degrees Celsius or less by a heater of a substrate support disposed within a process chamber, and incorporating nitrogen into the dielectric layer in the process chamber by annealing the dielectric layer at a second temperature between about 650 and about 1450 degrees Celsius in an ambient nitrogen environment, wherein the annealing is performed on the order of millisecond scale.

主权项

1. A method of processing a substrate, comprising:
incorporating nitrogen into a dielectric layer formed over a substrate in a process chamber by annealing the dielectric layer at a temperature between about 650 and about 1450 degrees Celsius in an ambient ammonia environment, wherein the annealing is performed using a laser beam having a wavelength between about 200 nm and about 20 micrometers and a dwell time of about 0.01 milliseconds to about 1000 milliseconds, and the dielectric layer has a dielectric constant greater than about 3.9.