| 发明名称 |
INTEGRATED STACKED TRANSFORMER |
| 摘要 |
An integrated stacked transformer includes a primary inductor and a secondary inductor, and the primary inductor includes at least a first turn and a second turn, and is at least formed by a plurality of windings of a first metal layer and a second metal layer, wherein the first metal layer and the second metal layer are two adjacent metal layers, and the second turn of the primary inductor is disposed inside the first turn; the secondary inductor includes at least a first turn, and the secondary inductor is at least formed by at least one winding formed by the second metal layer, wherein the first turn of the secondary inductor substantially overlaps the first turn of the primary inductor; wherein the second turn of the primary inductor includes a segment of a parallel connection structure constructed by the first metal layer and the second metal layer. |
| 申请公布号 |
US2015310980(A1) |
申请公布日期 |
2015.10.29 |
| 申请号 |
US201514690477 |
申请日期 |
2015.04.20 |
| 申请人 |
Realtek Semiconductor Corp. |
发明人 |
Yen Hsiao-Tsung;Jean Yuh-Sheng;Yeh Ta-Hsun |
| 分类号 |
H01F27/28;H01F27/29 |
主分类号 |
H01F27/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated stacked transformer, comprising:
a primary inductor, wherein the primary inductor comprises at least a first turn and a second turn, and the primary inductor is at least formed by a plurality of windings of a first metal layer and a second metal layer, and the second turn of the primary inductor is disposed inside the first turn; and a secondary inductor, wherein the secondary inductor comprises at least a first turn, and the secondary inductor is at least formed by at least one winding of the second metal layer, and the first turn of the secondary inductor and the first turn of the primary inductor are substantially overlapped; wherein the second turn of the primary inductor comprises a segment of a parallel connection structure formed by the first metal layer and the second metal layer. |
| 地址 |
HsinChu TW |
