EQUIVALENT FUSE CIRCUIT FOR A ONE-TIME PROGRAMMABLE READ-ONLY MEMORY ARRAY

摘要

Technologies are provided for measuring a programming current (PC) for a memory cell (MC) of a one-time programmable read-only memory array. The MC includes a fuse equivalent circuit (FEC) that includes a first current path (CP) having a first node, a second CP having a fuse of the memory cell and a second node, and a third CP. The PC is split into a first current, a second current and a third current that flow over the first CP, the second CP, and the third CP, respectively. A first voltage applied along the first path is divided to generate a second voltage at the first node, and an output voltage generated by an operational amplifier controls the second current to maintain a third voltage at the second node at substantially the same value as the second voltage so that the second current has a sufficiently low value and does not burn the fuse.

主权项

1. A one-time programmable read-only memory array, comprising:
a memory cell, comprising:
a first transistor; anda fuse equivalent circuit configured to receive a programming current and configured to output the programming current to the first transistor, the fuse equivalent circuit comprising:
a voltage divider configured to divide a first voltage to generate a second voltage;an operational amplifier comprising: a first input configured to receive a third voltage, and an output that is configured to generate an output voltage;a current mirror configured to receive the output voltage and configured to generate a first current; anda fuse, coupled to the first transistor and the voltage divider, the fuse being configured to receive the first current, wherein the output voltage generated by the operational amplifier controls the first current to maintain the third voltage at substantially the same value as the second voltage.