| 摘要 |
A CVD device includes a film formation processing unit, a fluorine gas generation unit, an inert gas supply source, and a film forming gas supply source. An object is housed in a chamber of the film formation processing unit during film formation processing, and film forming gas from the film forming gas supply source is supplied into the chamber. The fluorine gas generation unit includes an electrolytic bath, an anode, and a cathode. At least part of the surface of the anode is formed from a conductive carbon material having a diamond structure. Fluorine gas generated by the fluorine gas generation unit is supplied into the chamber when the chamber is cleaned. The film formation processing of the object and the cleaning of the chamber are controlled by one control unit. |
