Method Of Forming Chip With Through Silicon Via Electrode

摘要

The present invention provides a method of forming a chip with TSV electrode. A substrate with a first surface and a second surface is provided. A thinning process is performed from a side of the second surface so the second surface becomes a third surface. Next, a penetration via which penetrates through the first surface and the third surface is formed in the substrate. A patterned material layer is formed on the substrate, wherein the patterned material layer has an opening exposes the penetration via. A conductive layer is formed on the third surface thereby simultaneously forming a TSV electrode in the penetration via and a surface conductive layer in the opening.

主权项

1. A method of forming a chip with a though-silicon-via (TSV) electrode, comprising:
providing a substrate, wherein the substrate has a first surface and a second surface; performing a thinning process from the second surface of the substrate thereby making the second surface become a third surface; forming a penetration via which penetrates through the first surface and the third surface; forming a patterned material layer on the third surface of the substrate, wherein the patterned material layer has an opening exposing the penetration via; and simultaneously filling a conductive layer into the penetration via and the opening such that the conductive layer in the penetration via becomes a TSV electrode and the conductive layer in the opening becomes a surface conductive layer.