发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF MAINTAINING DEPOSITION APPARATUS
摘要 A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.
申请公布号 US2015311062(A1) 申请公布日期 2015.10.29
申请号 US201414578940 申请日期 2014.12.22
申请人 LEE Dong Yul;HAN Sang Heon;KIM Seung Hyun;KIM Jang Mi;SOLARI William;SHIM Hyun Wook;YOON Suk Ho 发明人 LEE Dong Yul;HAN Sang Heon;KIM Seung Hyun;KIM Jang Mi;SOLARI William;SHIM Hyun Wook;YOON Suk Ho
分类号 H01L21/02;H01L33/00 主分类号 H01L21/02
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor device, comprising: forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.
地址 Yongin-si KR
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