发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF MAINTAINING DEPOSITION APPARATUS |
摘要 |
A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer. |
申请公布号 |
US2015311062(A1) |
申请公布日期 |
2015.10.29 |
申请号 |
US201414578940 |
申请日期 |
2014.12.22 |
申请人 |
LEE Dong Yul;HAN Sang Heon;KIM Seung Hyun;KIM Jang Mi;SOLARI William;SHIM Hyun Wook;YOON Suk Ho |
发明人 |
LEE Dong Yul;HAN Sang Heon;KIM Seung Hyun;KIM Jang Mi;SOLARI William;SHIM Hyun Wook;YOON Suk Ho |
分类号 |
H01L21/02;H01L33/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, comprising:
forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer. |
地址 |
Yongin-si KR |