发明名称 |
VERTICAL-CAVITY SURFACE-EMITTING LASER |
摘要 |
Provided are a base substrate made of a semi-insulating semiconductor; an emission region multilayer unit formed on a surface of the base substrate and including each of an N-type semiconductor contact layer, an N-type DBR layer, an active layer, a P-type semiconductor DBR layer, and a P-type semiconductor contact layer; an anode electrode connected to the P-type semiconductor contact layer; and a cathode electrode formed on a surface side of the base substrate and connected to the N-type semiconductor contact layer. The N-type DBR layer is formed of 15 or more pairs of layers with different compositions laminated on each other. Through this configuration, a vertical-cavity surface-emitting laser that can suppress an occurrence of a defect caused by crystal missing arising from the base substrate can be provided at reduced cost. |
申请公布号 |
US2015311675(A1) |
申请公布日期 |
2015.10.29 |
申请号 |
US201514737103 |
申请日期 |
2015.06.11 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
IWATA Keiji;MATSUBARA Ippei;KONA Takayuki;WATANABE Hiroshi;YANAGASE Masashi |
分类号 |
H01S5/183;H01S5/343;H01S5/042 |
主分类号 |
H01S5/183 |
代理机构 |
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代理人 |
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主权项 |
1. A vertical-cavity surface-emitting laser, comprising:
a base substrate made of a semi-insulating semiconductor; an emission region multilayer unit formed on a surface of the base substrate, the emission region multilayer unit including each of an N-type semiconductor multilayer film reflection layer, an active layer including a quantum well, and a P-type semiconductor multilayer film reflection layer; an anode electrode connected to the P-type semiconductor multilayer film reflection layer; and a cathode electrode connected to the N-type semiconductor multilayer film reflection layer, wherein the N-type semiconductor multilayer film reflection layer is formed of 15 or more pairs of layers with different compositions laminated on each other. |
地址 |
Kyoto-fu JP |