Methods of Forming Pattern by Using Dual Tone Development Processes

摘要

Methods of forming a pattern are provided. The methods may include forming a dual tone photoresist layer on a support layer, forming a low light exposure region, a middle light exposure region, and a high light exposure region in a first region of the dual tone photoresist layer and forming a low light exposure region and a middle light exposure region in a second region of the dual tone photoresist layer by exposing the dual tone photoresist layer to light by using a mask comprising a gray feature. The method may also include forming preliminary patterns in the first region by performing a positive development process and forming first patterns which are spaced apart from one another in the first region and second patterns which are spaced apart from one another in the second region by performing a negative development process.

主权项

1. A method of forming a pattern, the method comprising:
forming a dual tone photoresist layer on a support layer; forming a low light exposure region, a middle light exposure region and a high light exposure region in a first region of the dual tone photoresist layer and forming a low light exposure region and a middle light exposure region in a second region of the dual tone photoresist layer by exposing the dual tone photoresist layer to light by using a mask comprising a gray feature; forming a plurality of preliminary patterns in the first region by removing the dual tone photoresist layer in the high light exposure region of the first region by performing a positive development process; and forming a plurality of first patterns which are spaced apart from one another in the first region and a plurality of second patterns which are spaced apart from one another in the second region by removing the dual tone photoresist layer in the low light exposure region of the first region and the dual tone photoresist layer in the low light exposure region of the second region by performing a negative development process.