| 摘要 |
Provided in the present invention is a method for manufacturing a low temperature direct growth graphene directly growing on a substrate at low temperature. Also, provided in the present invention is a method for manufacturing of a single layer or multilayer graphene. And, provided in the present invention is a multilayer graphene directly growing on a substrate. Provided in the present invention are a single layer graphene uniformly distributed on the upper part of a carbon dissolved layer, and a method for manufacturing graphene having a graphene atomic layer etched. Also, provided in the present invention is a graphene bending transistor manufactured by a method including method 1) to 3): 1) a face to face coupling method between a graphene bending circuit wafer including graphene and a circuit connected to the graphene and a threshold control circuit (CMOS wafer) controlling a graphene bending circuit wafer; 2) a face to face coupling method between graphene bending circuit wafer including a graphene and a circuit connected to the graphene and a threshold control circuit and a CMOS wafer; and 3) a face to face coupling method between a graphene bending circuit wafer including a graphene and a circuit connected to the graphene and a CMOS wafer, and then a manufacturing method preparing a threshold control circuit or a threshold control circuit and a CMOS circuit and/or a device, a transistor, etc. |
