发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.
申请公布号 US2015311439(A1) 申请公布日期 2015.10.29
申请号 US201514704303 申请日期 2015.05.05
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 YAMAZAKI Shunpei;TAKAYAMA Toru;MARUYAMA Junya;OHNO Yumiko
分类号 H01L51/00;H01L27/32 主分类号 H01L51/00
代理机构 代理人
主权项 1. (canceled)
地址 Atsugi-shi JP