| 发明名称 |
METHOD FOR FABRICATING A MAGNETORESISTIVE DEVICE |
| 摘要 |
Embodiments of the invention provide a method for fabricating a magnetoresistive device. The method comprises: releasing a multi-layer magnetoresistive structure for forming the magnetoresistive device from a first substrate to relax an intrinsic stress in the multi-layer magnetoresistive structure such that the magnetic and/or magnetoresistive properties of the magnetoresistive device can be improved. The magnetic and/or magnetoresistive properties include, but are not limited to coercivity, squareness or abruptness of switching, magnetoresistance (MR) and resistance of the magnetoresistive device. |
| 申请公布号 |
US2015311434(A1) |
申请公布日期 |
2015.10.29 |
| 申请号 |
US201514698210 |
申请日期 |
2015.04.28 |
| 申请人 |
National University of Singapore ;Yonsei University |
发明人 |
Loong Li Ming;Yang Hyunsoo;Lee Wonho;Ahn Jong-Hyun;Bhatia Charanjit Singh |
| 分类号 |
H01L43/12;H01L43/08 |
主分类号 |
H01L43/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a magnetoresistive device, comprising:
releasing a multi-layer magnetoresistive structure which is to be used for forming the magnetoresistive device, from a first substrate to relax an intrinsic stress in the multi-layer magnetoresistive structure to improve magnetic and/or magnetoresistive properties of the magnetoresistive device. |
| 地址 |
Singapore SG |
