| 发明名称 |
SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING THE SAME |
| 摘要 |
The present disclosure provides a method for forming a semiconductor structure. In accordance with some embodiments, the method includes providing a substrate and a conductive feature formed over the substrate; forming a low-k dielectric layer over the conductive feature; forming a contact trench aligned with the conductive feature; and selectively growing a sealing layer which is a monolayer formed on sidewalls of the contact trench. |
| 申请公布号 |
US2015311114(A1) |
申请公布日期 |
2015.10.29 |
| 申请号 |
US201414261367 |
申请日期 |
2014.04.24 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Huang Julia;Lin Hsiang-Wei |
| 分类号 |
H01L21/768;H01L23/522 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a semiconductor structure, comprising:
providing a substrate and a conductive feature formed over the substrate; forming a low-k dielectric layer over the conductive feature; forming a contact trench aligned with the conductive feature; and selectively growing a sealing layer which is a monolayer formed on sidewalls of the contact trench. |
| 地址 |
Hsin-Chu TW |
