SEMICONDUCTOR DEVICE, DISPLAY DEVICE HAVING SEMICONDUCTOR DEVICE, DISPLAY MODULE HAVING DISPLAY DEVICE, AND ELECTRONIC EQUIPMENT HAVING SEMICONDUCTOR DEVICE, DISPLAY DEVICE AND DISPLAY MODULE

摘要

PROBLEM TO BE SOLVED: To suppress variation in electric characteristics of a semiconductor device having a transistor having an oxide semiconductor, and improve its reliability.SOLUTION: In a semiconductor device having a transistor, the transistor is provided on a first insulation film, the transistor has an oxide semiconductor film on the first insulation film; a gate insulation film on the oxide semiconductor film; a gate electrode on a gate insulation film; a second insulation film on the oxide semiconductor film and the gate electrode; and a source electrode and a drain electrode electrically connected to the oxide semiconductor film, the first insulation film contains oxygen, the second insulation film contains hydrogen, the oxide semiconductor film has a first region contacting with the gate insulation film and a second region contacting with the second insulation film, the first insulation film has a third region overlapped with the first region and a fourth region overlapped with the second region, and a concentration of the impurity element of the fourth region is higher that of the third region.