发明名称 |
Contact Structure of Semiconductor Device |
摘要 |
The embodiments described above provide mechanisms of forming contact structures with low resistance. A strained material stack with multiple sub-layers is used to lower the Schottky barrier height (SBH) of the conductive layers underneath the contact structures. The strained material stack includes a SiGe main layer, a graded SiG layer, a GeB layer, a Ge layer, and a SiGe top layer. The GeB layer moves the Schottky barrier to an interface between GeB and a metal germanide, which greatly reduces the Schottky barrier height (SBH). The lower SBH, the Ge in the SiGe top layer forms metal germanide and high B concentration in the GeB layer help to reduce the resistance of the conductive layers underneath the contact structures. |
申请公布号 |
US2015311315(A1) |
申请公布日期 |
2015.10.29 |
申请号 |
US201514792467 |
申请日期 |
2015.07.06 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Tsai Chun Hsiung;Lin Yan-Ting |
分类号 |
H01L29/66;H01L29/08 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a semiconductor device structure, comprising:
forming a gate structure formed over a surface of a semiconductor substrate; forming a recess neighboring the gate structure, wherein the recess is formed below the surface of the semiconductor substrate; and forming a strained material stack filling the recess, wherein the strain material stack comprises a first SiGe layer, a graded SiGe layer, a boron-doped (B-doped) germanium (GeB) layer, a Ge layer. |
地址 |
Hsin-Chu TW |