UTILIZATION OF ANGLED TRENCH FOR EFFECTIVE ASPECT RATIO TRAPPING OF DEFECTS IN STRAIN-RELAXED HETEROEPITAXY OF SEMICONDUCTOR FILMS

摘要

Embodiments of the present disclosure relate to reducing dislocation density in a heteroepitaxial growth film and devices including heteroepitaxial films with reduced dislocation density. According to embodiments of the present disclosure, sidewalls of high aspect ratio trenches may be tilted or angled to allow defects in crystalline material formed in the high aspect ratio trenches to be terminated in the tilted sidewalls, including defects propagating along the length of the high aspect ratio trenches. Embodiments of the present disclosure may be used to reduce defects in heteroepitaxial growth on silicon (Si) for microelectronic applications, such as high mobility channels using Group III-V elements in field effect transistors.

主权项

1. A device, comprising:
a first crystalline material; a non-crystalline layer formed over the first crystalline material, wherein an angled trench is formed through the non-crystalline layer so that the first crystalline material is at a bottom of the angled trench; and a second crystalline material formed in the angled trench by epitaxial growth, wherein the first crystalline material and the second crystalline material have mismatched lattice dimensions, and a projection of a sidewall of the angled trench on a top surface of the first crystalline material is longer than the bottom of the angled trench.