发明名称 |
IN-PLACE CHANGE BETWEEN TRANSIENT AND PERSISTENT STATE FOR DATA STRUCTURES IN NON-VOLATILE MEMORY |
摘要 |
Methods and apparatus related to in-place change between transient and persistent state for data structures on non-volatile memory are described. In one embodiment, controller logic causes a change in a state of a first portion of one or more non-volatile memory devices between a persistent state and a transient state and without moving data stored in the first portion of the one or more non-volatile memory devices. Other embodiments are also disclosed and claimed. |
申请公布号 |
EP2936317(A1) |
申请公布日期 |
2015.10.28 |
申请号 |
EP20130869669 |
申请日期 |
2013.06.19 |
申请人 |
INTEL CORPORATION |
发明人 |
GRIES, MATTHIAS;CINTRA, MARCELO;LEHNIG, THOMAS;STEIBL, SEBASTIAN;LUND-LARSEN, TOR |
分类号 |
G06F12/02;G06F3/06;G06F9/50;G06F13/14;G11C7/10 |
主分类号 |
G06F12/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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