发明名称 IN-PLACE CHANGE BETWEEN TRANSIENT AND PERSISTENT STATE FOR DATA STRUCTURES IN NON-VOLATILE MEMORY
摘要 Methods and apparatus related to in-place change between transient and persistent state for data structures on non-volatile memory are described. In one embodiment, controller logic causes a change in a state of a first portion of one or more non-volatile memory devices between a persistent state and a transient state and without moving data stored in the first portion of the one or more non-volatile memory devices. Other embodiments are also disclosed and claimed.
申请公布号 EP2936317(A1) 申请公布日期 2015.10.28
申请号 EP20130869669 申请日期 2013.06.19
申请人 INTEL CORPORATION 发明人 GRIES, MATTHIAS;CINTRA, MARCELO;LEHNIG, THOMAS;STEIBL, SEBASTIAN;LUND-LARSEN, TOR
分类号 G06F12/02;G06F3/06;G06F9/50;G06F13/14;G11C7/10 主分类号 G06F12/02
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