发明名称 Electrostatic discharge protection circuit
摘要 An electrostatic discharge (ESD) protection circuit includes a first n-type transistor, a discharge acceleration circuit and a discharge time circuit. The first n-type transistor has a first terminal coupled to a supply voltage, a second terminal coupled to a reference voltage, and a gate, wherein the first n-type transistor couples the supply voltage to the reference voltage during an ESD event at an I/O pad. The discharge acceleration circuit is coupled to the gate of the first n-type transistor to the I/O pad during the ESD event and coupled to the gate of the first n-type transistor to the reference voltage when there is no ESD event. The discharge time circuit, coupled to the discharge acceleration circuit and the supply voltage, controls a discharge time of the first n-type transistor of coupling the supply voltage to the reference voltage during the ESD event at the I/O pad.
申请公布号 EP2937901(A1) 申请公布日期 2015.10.28
申请号 EP20140193178 申请日期 2014.11.14
申请人 VIA ALLIANCE SEMICONDUCTOR CO., LTD. 发明人 LEE, YEONG-SHENG
分类号 H01L27/02;H02H9/04 主分类号 H01L27/02
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