| 摘要 |
According to one embodiment, a semiconductor device includes a semiconductor substrate having a first surface and a second surface, and having a LSI on the first surface of the semiconductor substrate, a first insulating layer with an opening, the first insulating layer provided on the first surface of the semiconductor substrate, a conductive layer on the opening, the conductive layer being connected to the LSI, and a via extending from a second surface of the semiconductor substrate to the conductive layer through the opening, the via having a size larger than a size of the opening in a range from the second surface to a first interface between the semiconductor substrate and the first insulating layer, and having a size equal to the size of the opening in the opening. |
