PROCESS FOR FABRICATING NANOLITHOGRAPHY MASKS

摘要

The invention concerns a manufacturing method for nanolithography masks from a PS-b-PMMA block copolymer film deposited on a surface to be etched, said copolymer film comprising PMMA nanodomains orientated perpendicularly to the surface to be etched, said method being characterized in that it comprises the following steps: partially irradiating said copolymer film to form a first irradiated area and a second non-irradiated area in said copolymer film, then treating said copolymer film in a developer solvent to selectively remove at least said PMMA nanodomains of said first irradiated area of said copolymer film.