| 摘要 |
<p>Provided is a semiconductor device that is equipped with a terminal region where electric field concentration can be effectively relaxed. This semiconductor device is provided with: a first conductivity type semiconductor layer; a first electric field relaxing region, which is formed on a part of the surface of the semiconductor layer, and which is alternately provided with second conductivity type first small regions having first impurity concentration, and second conductivity type second small regions having second impurity concentration lower than the first impurity concentration; and a second electric field relaxing region, which is formed to surround the first electric field relaxing region toward the outer circumferential side of the first electric field relaxing region, and which is alternately provided with a plurality of second conductivity type third small regions having third impurity concentration equal to or higher than the first impurity concentration, and a plurality of second conductivity type fourth small regions having fourth impurity concentration lower than the second impurity concentration.</p> |
