发明名称 半導体装置
摘要 <p>According to embodiments, a semiconductor device includes an insulating substrate, a first electrode plate disposed on the insulating substrate, a second electrode plate disposed on the insulating substrate, a third electrode plate disposed on the insulating substrate, a first semiconductor element disposed on the first electrode plate, a first electrode of the first semiconductor element being electrically connected to the first electrode plate, a second semiconductor element disposed on the second electrode plate, a first electrode of the second semiconductor element being electrically connected to the second electrode plate, a first bonding wire electrically connecting a second electrode of the first semiconductor element to the third electrode plate, and a second bonding wire electrically connecting a second electrode of the second semiconductor element to the third electrode plate.</p>
申请公布号 JP5801339(B2) 申请公布日期 2015.10.28
申请号 JP20130060756 申请日期 2013.03.22
申请人 发明人
分类号 H01L25/04;H01L25/18 主分类号 H01L25/04
代理机构 代理人
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