发明名称 |
COPPER-ASSISTED, ANTI-REFLECTION ETCHING OF SILICON SURFACES |
摘要 |
<p>A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.</p> |
申请公布号 |
EP2828895(A4) |
申请公布日期 |
2015.10.28 |
申请号 |
EP20130764428 |
申请日期 |
2013.03.11 |
申请人 |
ALLIANCE FOR SUSTAINABLE ENERGY, LLC;TOOR, FATIMA;BRANZ, HOWARD M. |
发明人 |
TOOR, FATIMA;BRANZ, HOWARD M. |
分类号 |
H01L31/0236;H01L31/18 |
主分类号 |
H01L31/0236 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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