| 摘要 |
PROBLEM TO BE SOLVED: To provide a transparent conductive film based on ZnO having a low resistance comparable to ITO (Indium Tin Oxide), and a method for manufacturing the same.SOLUTION: A transparent conductive film consists of an oxide film having a composition of Al: 0.1-2.0 wt.% with respect to a total amount of metallic component with the balance being Zn and inevitable impurities, and it is oriented to an m axis direction. To form the transparent conductive film, a sputtering target consisting of a sintered body of an oxide containing Al: 0.1-2.0 wt.% with respect to the total amount of metallic component with the balance being Zn and inevitable impurities is used, and sputtering is performed on a hexagonal ZnO single crystal substrate with c-plane orientation or a sapphire single crystal substrate with a similar plane orientation at a deposition temperature of 200-400°C. |
