| 摘要 |
PROBLEM TO BE SOLVED: To provide an LED element capable of improving light-emitting efficiency by securing current spreading in a horizontal direction in an active layer without causing a problem resulting from lattice mismatch of an n-type semiconductor layer adjacent to the active layer.SOLUTION: An LED element 1 formed by growing a nitride semiconductor layer on a support substrate 11 in a c-axis direction comprises: a first semiconductor layer 15 composed of an n-type nitride semiconductor; a current diffusion layer 3; an active layer 17 composed of a nitride semiconductor; and a second semiconductor layer 19 composed of a p-type nitride semiconductor. The current diffusion layer 3 includes heterojunctions of a third semiconductor layer composed of InGaN(0<x≤0.05) and a fourth semiconductor layer composed of n-AlGaInN(0<y1<1,0<y2<1,0≤y3≤0.05,y1+y2+y3=1). The film thickness of the third semiconductor layer is not less than 10 nm and not more than 25 nm. |
