| 摘要 |
<p>A method is used with an IC device including a stack of dielectric/conductive layers to form interlayer connectors extending from a surface of the device to the conductive layers. Contact openings are created through a dielectric layer to a first conductive layer. N etch masks, with 2N-1 being less than W, 2N being greater than or equal to W, have spaced apart open etch regions and mask regions elsewhere. The stack of layers are etched only through W-1 contact openings to create extended contact openings extending to W-1 conductive layers; 2n-1 conductive layers are etched for up to half of the contact openings for each etch mask n=1, 2 . . . N. The contact openings are etched with different combinations of the etch masks' open etch regions. Interlayer connectors are formed in the contact openings.</p> |
