| 摘要 |
<p>A semiconductor device includes: first and second n-type wells formed in p-type semiconductor substrate, the second n-type well being deeper than the first n-type well; first and second p-type backgate regions formed in the first and second n-type wells; first and second n-type source regions formed in the first and second p-type backgate regions; first and second n-type drain regions formed in the first and second n-type wells, at positions opposed to the first and second n-type source regions, sandwiching the first and the second p-type backgate regions; and field insulation films formed on the substrate, at positions between the first and second p-type backgate regions and the first and second n-type drain regions; whereby first transistor is formed in the first n-type well, and second transistor is formed in the second n-type well with a higher reverse voltage durability than the first transistor.</p> |
