| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an etching processing method, by which distortion of a formed pattern can be prevented even when the pattern has a high aspect ratio.SOLUTION: A SiOfilm 40 on a wafer W is subjected to plasma etching by use of a photoresist film 45 disposed on the SiOfilm 40 in a substrate processing apparatus 10 in which a high-frequency power 55 for generating plasma is applied to the inside of a process chamber 15, a high-frequency power 56 for introducing ions is applied to a susceptor 12, and a DC power at a negative potential is applied to an upper electrode plate 27. In the above process, while the DC power at a negative potential is applied to the upper electrode plate 27, the high-frequency power 55 for generating plasma and the high-frequency power 56 for introducing ions are applied in the form of pulse waves so as to create such a condition that neither the high-frequency power 55 for generating plasma nor the high-frequency power 56 for introducing ions is applied.</p> |
