| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a formation method of an ohmic electrode capable of removing a resist film used to form a contact hole using an etching liquid containing sulfuric acid. <P>SOLUTION: A formation method of an ohmic electrode comprises: a laminated electrode part formation step of forming a laminated electrode part 2; an annealing step of heat-treating the laminated electrode part 2; a covering electrode part formation step of forming a covering electrode part 4 by covering the heat-treated laminated electrode part 2 with a covering part 3; an insulator film formation step of forming an insulator film 5 on a surface of a semiconductor layer 1 so as to cover the covering electrode part 4; a resist film formation step of patterning a resist film 6 in which an opening 7 is formed corresponding to the covering electrode part 4 on a surface of the insulator film 5; an exposure step of exposing the covering electrode part 4 by removing the insulator film 5 exposed from the opening 7 of the resist film 6; and a resist film removal step of removing the resist film 6 using an etching liquid containing sulfuric acid. A material of the covering part 3 is gold or platinum. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
