PLASMA PROCESSING APPARATUS

摘要

The present invention provides a plasma processing device capable of inducing a strong radio-frequency electric field within a vacuum container and improving the uniformity in the density distribution of the plasma, while preventing formation of particles or contamination of a base body due to the sputtering of the conductor of the radio-frequency antenna. A plasma processing device 10 according to the present invention is an inductively coupled plasma processing device using a radio-frequency electric discharge, including: a vacuum container 11; an antenna-placing section 12 provided between an inner surface 111B and an outer surface 111A of a wall of the vacuum container 11; a radio-frequency antenna placed in the antenna-placing section 12, the radio-frequency antenna being terminated without completing one turn; and a dielectric separating member 15 separating the antenna-placing section 12 and an internal space 112 of the vacuum container, wherein the radio-frequency antenna 13 has a length equal to or shorter than one quarter of a wavelength of the radio-frequency waves.