FORMULATIONS FOR WET ETCHING NIPT DURING SILICIDE FABRICATION
摘要
<p>Compositions and methods for substantially and efficiently removing NiPt (1-25%) material from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as gate metal materials.</p>
申请公布号
EP2847364(A4)
申请公布日期
2015.10.28
申请号
EP20130787810
申请日期
2013.05.10
申请人
ENTEGRIS, INC.
发明人
CHEN, TIANNIU;BILODEAU, STEVEN M.;COOPER, EMANUEL I.;CHEN, LI-MIN;BARNES, JEFFREY A.;BISCOTTO, MARK;BOGGS, KARL E.;RAJARAM, REKHA
