Non-volatile memory device including charge trapping layer and method for fabricating the same

摘要

A non-volatile memory device that includes: a charge trapping layer for trapping charges, wherein the charge trapping layer includes: a linker layer (120) formed over a substrate (112) and including linkers (L) to be bonded to metal ions; metallic nanoparticles (140) formed out of the metal ions over the linker layer; and a nitride (150) filling gaps between the metallic nanoparticles.