Memristors with asymmetric electrodes

摘要

Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device includes an active region, a first electrode disposed on a first surface of the active region, and a second electrode disposed on a second surface of the active region, the second surface opposite the first surface. The first electrode is configured with a smaller width than the active region in a first direction, and the second electrode is configured with a larger width than the active region in a second direction. Application of a voltage to at least one of the electrodes produces an electric field across a sub-region within the active region between the first electrode and the second electrode.

主权项

1. A memristor device, comprising:
an active region comprising a primary active region and a secondary active region, wherein the secondary active region is a source of dopants for the primary active region; a first electrode disposed on a first surface of the active region, the first electrode configured with a smaller width than the active region in a first direction; and a second electrode disposed on a second surface of the active region, the second surface opposite the first surface and the second electrode configured with a larger width than the active region in a second direction, wherein application of a voltage to at least one of the electrodes produces an electric field across a sub-region within the active region between the first electrode and the second electrode; and a patterned opening in at least one of the electrodes, the patterned opening concentrating the electric field within the sub-region.