Arrangement for generating EUV radiation

摘要

The invention is directed to an arrangement for generating EUV radiation particularly for source modules in exposure installations for EUV lithography for semiconductor chip fabrication. The object of the invention, to find a novel possibility for realizing an EUV source module which appreciably improves the ratio of resources to results in the transfer of radiation from the primary source location (plasma 3) to the secondary source location (output opening (6) of the source module (1)/intermediate focus plane (62)), is met according to the invention in that the plasma (3) is formed as a volume emitter for direct illumination of the output opening (6) without collector optics (5), and the transverse dimension (d) of the plasma (3) is greater than the diameter (D) of the output opening (6), wherein the extent to which the diameter is exceeded depends on the distance (L) between the plasma (3) and the output opening (6) and on the numerical aperture (NA) of the illumination system downstream.

主权项

1. An arrangement for the generating of EUV radiation, comprising:
a plasma generation arrangement for generating a spatially definitely limited hot plasma having a transverse dimension d and defining a location of a primary source illumination, the plasma generation arrangement located in a vacuum chamber; the vacuum chamber having an optical axis and an output opening for defining a location of a homogeneously illuminated secondary source for an exposure system located downstream from the output opening along the optical axis, the output opening having a diameter D; and at least one debris filter arranged between the plasma and the output opening, wherein the plasma is formed as a volume emitter for direct illumination of the output opening without collector optics, the transverse dimension d of the plasma being greater than the diameter D of the output opening, and wherein the difference between d and D depends on a distance L between the plasma and the output opening, and on a numerical aperture NA of the illumination system located downstream from the output opening along the optical axis.