发明名称 |
Controlling voltage at pad |
摘要 |
One or more systems and techniques for communicating a signal between a first chip and a second chip using one or more circuits are provided. If the signal corresponds to a first voltage, one or more voltages are provided to one or more locations and a capacitive load is charged using a pull-up driver that is connected to a power supply. If the signal corresponds to a second voltage, one or more voltages are provided to one or more locations and the capacitive load is discharged using a pull-down driver that is connected to ground. When the first chip is powered off, a fail-safe mode is provided by configuring a cross control circuit to generate a bias to control one or more transistors. |
申请公布号 |
US9172376(B2) |
申请公布日期 |
2015.10.27 |
申请号 |
US201313903422 |
申请日期 |
2013.05.28 |
申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
Chen Yu-Ren;Wang Guang-Cheng;Yu Ming-Hsin |
分类号 |
H03L5/00;H03K19/0185;H03K19/007 |
主分类号 |
H03L5/00 |
代理机构 |
Cooper Legal Group, LLC |
代理人 |
Cooper Legal Group, LLC |
主权项 |
1. A method for applying a first voltage at a pad, comprising:
activating a pull-up driver situated between a power supply outputting the first voltage and a node to pull the node to a second voltage, the second voltage less than the first voltage by about a voltage threshold of the pull-up driver; triggering, responsive to the node being pulled to the second voltage, a cross control circuit to activate one or more transistors situated between the pull-up driver and the pad, comprising:
applying the first voltage to a first gate of a first transistor of the one or more transistors; and pulling the pad to the first voltage responsive to activating the one or more transistors situated between the pull-up driver and the pad. |
地址 |
Hsin-Chu TW |