Field plate trench transistor and method for producing it

摘要

A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.

主权项

1. A semiconductor transistor including a field plate trench transistor comprising:
a trench structure; a field electrode structure embedded in the trench structure, the field electrode structure being electrically insulated from a semiconductor body by an insulation structure; and a voltage divider between a source terminal and a drain terminal, the voltage divider including a series circuit comprising at least one resistor and at least one diode, the series circuit being connected between the source and drain terminals, wherein the field electrode structure is electrically connected to the voltage divider, and the at least one diode is a body substrate diode.