| 发明名称 | Resist underlayer film-forming composition, pattern-forming method and resist underlayer film | ||
| 摘要 | A resist underlayer film-forming composition includes a polymer having a glass transition temperature (Tg) of 0 to 180° C. The resist underlayer film-forming composition is used for a multilayer resist process. The multilayer resist process includes forming a silicon-based oxide film on a surface of a resist underlayer film, and subjecting the silicon-based oxide film to wet etching. | ||
| 申请公布号 | US9170493(B2) | 申请公布日期 | 2015.10.27 |
| 申请号 | US201314011781 | 申请日期 | 2013.08.28 |
| 申请人 | JSR CORPORATION | 发明人 | Minegishi Shin-ya;Komura Kazuhiko;Nakafuji Shin-ya;Nakano Takanori |
| 分类号 | G03F7/40;G03F7/11;H01L21/027;G03F7/09;C08F220/18;C08L61/06;C08L61/12;G03F7/34;H01L21/311 | 主分类号 | G03F7/40 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A pattern-forming method comprising: providing a resist underlayer film on a substrate using a resist underlayer film-forming composition, the resist underlayer film-forming composition comprising a polymer having a glass transition temperature (Tg) of 0 to 180° C.; providing a silicon-containing oxide film on a surface of the resist underlayer film; subjecting the silicon-containing oxide film to wet etching; and subjecting the substrate to dry etching using the resist underlayer film as a mask, after the silicon-containing oxide film is subjected to wet etching. | ||
| 地址 | Tokyo JP | ||