发明名称 Light-emitting device having a patterned substrate
摘要 A light-emitting diode device and a manufacturing method thereof. The light-emitting diode device includes: a substrate (1); an epitaxial layer at one side of the substrate (1) and including an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further includes an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the light-emitting diode device and the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.
申请公布号 US9172002(B2) 申请公布日期 2015.10.27
申请号 US201214376080 申请日期 2012.12.03
申请人 Wuxi China Resources Huajing Microelectronic Co., Ltd. 发明人 Wang Lei;Li Guoqi;Yu Zhiyan;Pu Rongsheng
分类号 H01L33/38;H01L33/08 主分类号 H01L33/38
代理机构 Wood, Phillips, Katz, Clark and Mortimer 代理人 Wood, Phillips, Katz, Clark and Mortimer
主权项 1. A Light-Emitting Diode device, comprising: a substrate; an epitaxial layer arranged at one side of the substrate, wherein the epitaxial layer comprises an N-type layer, a P-type layer, and an active layer between the N-type layer and the P-type layer; an N-type electrode, which is in ohmic contact with one side of the N-type layer that is away from the substrate; a P-type electrode, which is in ohmic contact with one side of the P-type layer that is away from the substrate; an adhesive layer, one side of which is electrically glued to both one side of the N-type electrode that is away from the N-type layer and one side of the P-type electrode that is away from the P-type layer; and a patterned substrate electrically glued to the other side of the adhesive layer; wherein, the Light-Emitting Diode device further comprises an insulating layer between the N-type electrode and the P-type electrode, with the N-type electrode and the P-type electrode being electrically insulated by the insulating layer.
地址 CN