发明名称 |
Light-emitting device having a patterned substrate |
摘要 |
A light-emitting diode device and a manufacturing method thereof. The light-emitting diode device includes: a substrate (1); an epitaxial layer at one side of the substrate (1) and including an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further includes an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the light-emitting diode device and the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized. |
申请公布号 |
US9172002(B2) |
申请公布日期 |
2015.10.27 |
申请号 |
US201214376080 |
申请日期 |
2012.12.03 |
申请人 |
Wuxi China Resources Huajing Microelectronic Co., Ltd. |
发明人 |
Wang Lei;Li Guoqi;Yu Zhiyan;Pu Rongsheng |
分类号 |
H01L33/38;H01L33/08 |
主分类号 |
H01L33/38 |
代理机构 |
Wood, Phillips, Katz, Clark and Mortimer |
代理人 |
Wood, Phillips, Katz, Clark and Mortimer |
主权项 |
1. A Light-Emitting Diode device, comprising:
a substrate; an epitaxial layer arranged at one side of the substrate, wherein the epitaxial layer comprises an N-type layer, a P-type layer, and an active layer between the N-type layer and the P-type layer; an N-type electrode, which is in ohmic contact with one side of the N-type layer that is away from the substrate; a P-type electrode, which is in ohmic contact with one side of the P-type layer that is away from the substrate; an adhesive layer, one side of which is electrically glued to both one side of the N-type electrode that is away from the N-type layer and one side of the P-type electrode that is away from the P-type layer; and a patterned substrate electrically glued to the other side of the adhesive layer; wherein, the Light-Emitting Diode device further comprises an insulating layer between the N-type electrode and the P-type electrode, with the N-type electrode and the P-type electrode being electrically insulated by the insulating layer. |
地址 |
CN |