Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

摘要

A substrate processing apparatus includes a processing chamber accommodating a substrate; first and second process gas supply units that respectively supply first and second process gases from above and laterally relative to the substrate; and first and second reactive gas supply units that respectively supply first and second reactive gases from above and laterally relative to the substrate. A control unit controls the other units such that a total amount of the first and second process gases supplied to a center portion of the substrate is different from that supplied to a peripheral portion of the substrate, or a total amount of the first and second reactive gases supplied to the center portion of the substrate is different from that supplied to the peripheral portion of the substrate.

主权项

1. A substrate processing apparatus comprising:
a process container accommodating a substrate; a first process gas supply unit configured to supply a first process gas to a center portion of the substrate from above the substrate; a first reactive gas supply unit configured to supply a first reactive gas to the center portion of the substrate from above the substrate; a second process gas supply unit configured to supply a second process gas to the center portion of the substrate from a lateral direction with respect to the substrate; a second reactive gas supply unit configured to supply a second reactive gas to the center portion of the substrate from the lateral direction with respect to the substrate; an activation unit configured to activate at least one of the first reactive gas and the second reactive gas to generate plasma; a plasma adjusting electrode installed above the center portion of the substrate outside the process container, wherein the plasma adjusting electrode is configured to adjust densities of the plasmas at the center portion and at a peripheral portion of the substrate and control the plasma adjusting electrode to move upward and downward; and a control unit configured to control the first process gas supply unit, the second process gas supply unit, the first reactive gas supply unit, the second reactive gas supply unit, the activation unit, and the plasma adjusting electrode.