发明名称 |
High side gate driver, switching chip, and power device |
摘要 |
A high side gate driver, a switching chip, and a power device, which respectively include a protection device, are provided. The high side gate driver includes a first terminal configured to receive a first low level driving power supply that is provided to turn off the high side normally-on switch; a first switching device connected to the first terminal; and a protection device connected in series between the first switching device and a gate of the high side normally-on switch, the protection device configured to absorb a majority of a voltage applied to a gate of the high side normally-on switch. The power device includes the high side gate driver. In addition, the switching chip includes a high side normally-on switch, an additional normally-on switch, and a low side normally-on switch, which have a same structure. |
申请公布号 |
US9172356(B2) |
申请公布日期 |
2015.10.27 |
申请号 |
US201213688484 |
申请日期 |
2012.11.29 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Choi Hyun-sik;Kim Ho-jung;Shin Jai-kwang;Chung U-in |
分类号 |
H03B1/00;H03K3/00;G05F3/02;H03K17/06 |
主分类号 |
H03B1/00 |
代理机构 |
Harness, Dickey & Pierce, P.L.C. |
代理人 |
Harness, Dickey & Pierce, P.L.C. |
主权项 |
1. A high side gate driver configured to control a high side normally-on switch, the high side gate driver comprising:
a first switching device configured to receive a first low level driving power supply; and a protection device connected in series between the first switching device and a gate of the high side normally-on switch, the protection device configured to reduce a voltage that is applied to the first switching device, wherein the protection device includes an additional normally-on switch, the additional normally-on switch has a negative threshold voltage, and a gate of the additional normally-on switch is connected to a ground terminal, a first voltage and a second voltage larger than the first voltage are transmitted to the gate of the high-side normally-on switch such that charges are stored in the gate, and the charges are discharged when the first switching device is turned on, and the additional normally-on switch prevents a breakdown of the first switching device during the discharge. |
地址 |
Gyeonggi-do KR |