发明名称 High side gate driver, switching chip, and power device
摘要 A high side gate driver, a switching chip, and a power device, which respectively include a protection device, are provided. The high side gate driver includes a first terminal configured to receive a first low level driving power supply that is provided to turn off the high side normally-on switch; a first switching device connected to the first terminal; and a protection device connected in series between the first switching device and a gate of the high side normally-on switch, the protection device configured to absorb a majority of a voltage applied to a gate of the high side normally-on switch. The power device includes the high side gate driver. In addition, the switching chip includes a high side normally-on switch, an additional normally-on switch, and a low side normally-on switch, which have a same structure.
申请公布号 US9172356(B2) 申请公布日期 2015.10.27
申请号 US201213688484 申请日期 2012.11.29
申请人 Samsung Electronics Co., Ltd. 发明人 Choi Hyun-sik;Kim Ho-jung;Shin Jai-kwang;Chung U-in
分类号 H03B1/00;H03K3/00;G05F3/02;H03K17/06 主分类号 H03B1/00
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. A high side gate driver configured to control a high side normally-on switch, the high side gate driver comprising: a first switching device configured to receive a first low level driving power supply; and a protection device connected in series between the first switching device and a gate of the high side normally-on switch, the protection device configured to reduce a voltage that is applied to the first switching device, wherein the protection device includes an additional normally-on switch, the additional normally-on switch has a negative threshold voltage, and a gate of the additional normally-on switch is connected to a ground terminal, a first voltage and a second voltage larger than the first voltage are transmitted to the gate of the high-side normally-on switch such that charges are stored in the gate, and the charges are discharged when the first switching device is turned on, and the additional normally-on switch prevents a breakdown of the first switching device during the discharge.
地址 Gyeonggi-do KR