| 摘要 |
FIELD: radio engineering, communication.SUBSTANCE: multidifferential amplifier for a radiation-resistant bipolar-field technological process, which includes first (17) and second (18) field-effect transistors, the sources of which are combined and connected to a first (14) power supply bus through a first (19) additional resistor, first (20) and second (21) additional bipolar transistors, the collectors of which are connected to the combined sources of the first (17) and second (18) field-effect transistors, the base of the first (20) additional transistor is connected to the base of a first (3) output transistor and is connected to the drain of the first (17) field-effect transistor, the emitter of the first (20) additional transistor is connected to the emitter of the first (3) output transistor, the base of the second (21) additional transistor is connected to the base of the second (6) output transistor and is connected to the drain of the second (8) field-effect transistor, the emitter of the second (21) additional transistor is connected to the emitter of a second (6) output transistor, the collector of the first (3) output transistor is connected to the first (13) output of the device, the collector of the second (6) output transistor is connected to the second (16) output of the device, wherein the gates of the first (17) and second (18) field-effect transistors are connected to the first (14) power supply bus.EFFECT: radiation-resistant symmetrical multidifferential amplifier for a bipolar-field technological process with high gain of the input differential signal, low transfer coefficient of the input in-phase signal.2 cl, 10 dwg |
