Photoelectric conversion device, method of manufacturing the same, and camera

摘要

A photoelectric conversion device, comprising a photoelectric conversion portion, provided in a semiconductor substrate, including a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type provided adjacent to the first semiconductor region, a third semiconductor region of the first conductivity type provided at a position away from the second semiconductor region, and a gate electrode provided between the second semiconductor region and the third semiconductor region, wherein the second semiconductor region is provided at a position away from the gate electrode, and the semiconductor substrate includes a region of a second conductivity type within a region extending from an edge of the second semiconductor region to below the gate electrode.

主权项

1. A photoelectric conversion device comprising:
a photoelectric conversion portion, provided in a semiconductor substrate, including a first semiconductor region of a first conductivity type; a second semiconductor region of the first conductivity type, provided adjacent to the first semiconductor region, having a lower concentration of an impurity of the first conductivity than the first semiconductor region; a third semiconductor region of the first conductivity type provided at a position away from the second semiconductor region; and a gate electrode provided on an insulation film on the semiconductor substrate between the second semiconductor region and the third semiconductor region, wherein, in a planar view, the second semiconductor region is provided at a position away from the gate electrode, and the semiconductor substrate includes a region of a second conductivity type different in polarity from the first conductivity type within a region extending from an edge of the second semiconductor region to below the gate electrode.