| 发明名称 | Ferroelectric capacitor | ||
| 摘要 | A ferroelectric capacitor includes a ferroelectric film, a lower electrode in contact with one surface of the ferroelectric film, and an upper electrode in contact with the other surface of the ferroelectric film. At least one of the upper electrode and the lower electrode has a stacked electrode structure in which one or more oxide conductive layers and one or more metal layers are stacked alternately, and the stacked electrode structure includes at least one of two or more oxide conductive layers and two or more metal layers. | ||
| 申请公布号 | US9171850(B2) | 申请公布日期 | 2015.10.27 |
| 申请号 | US201414300461 | 申请日期 | 2014.06.10 |
| 申请人 | Rohm Co., Ltd. | 发明人 | Fujimori Yoshikazu;Ito Hiroaki;Date Tomohiro |
| 分类号 | H01L27/115;H01L49/02 | 主分类号 | H01L27/115 |
| 代理机构 | Fish & Richardson P.C. | 代理人 | Fish & Richardson P.C. |
| 主权项 | 1. A ferroelectric capacitor comprising: a ferroelectric film including a first surface and a second surface; a lower electrode including a first surface and a second surface, the first surface of the lower electrode in contact with the first surface of the ferroelectric film; an upper electrode in contact with the second surface of the ferroelectric film, wherein at least one of the upper electrode or the lower electrode has a stacked electrode structure in which one or more oxide conductive layers and one or more metal layers are stacked alternatively; a conductive barrier film in contact with the second surface of the lower electrode; and a porous iridium region including voids formed in the one or more oxide conductive layers made of iridium oxide, and formed of iridium by losing oxygen from the one or more oxide conductive layers. | ||
| 地址 | Kyoto JP | ||