发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor device comprises: a semiconductor pattern; a first area penetrating the semiconductor pattern; a second area expanded from the first area wherein the thickness of the second area is thicker than the thickness of the first area; a first barrier pattern surrounding the semiconductor pattern on the first area; a material pattern located in the first barrier pattern wherein the material pattern has etch selectivity about the first barrier pattern; conductive films with conductive patterns on the second area; and contact plugs connected to the second area of each conductive film.
申请公布号 KR20150120031(A) 申请公布日期 2015.10.27
申请号 KR20140045557 申请日期 2014.04.16
申请人 SK HYNIX INC. 发明人 LEE, KI HONG;PYI, SEUNG HO;BIN, JIN HO
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
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