发明名称 Method of generating high quality hole, recess or well in substrate
摘要 A method of generating a hole or well in an electrically insulating or semiconducting substrate, a hole or well in a substrate generated by this method, and an array of holes or wells in a substrate generated by the method.
申请公布号 US9168614(B2) 申请公布日期 2015.10.27
申请号 US201313967689 申请日期 2013.08.15
申请人 ASAHI GLASS CO., LTD. 发明人 Schmidt Christian;Dittmann Leander;Chaize Adrien;Hoyer Svend
分类号 B23K26/38;B23K26/40;B26F1/28;H03K3/537;B23K26/06;B23K26/14;B23K26/18;B23K26/30;C03C23/00;H01L31/049 主分类号 B23K26/38
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A method of generating a hole, recess or well in a substrate, comprising: providing a substrate which is electrically insulating or semiconducting at room temperature and which has a first modulation layer on a first surface of the substrate and a second modulation layer on a second surface of the substrate such that the first and second modulation layers are in contact with a substrate region where the hole, recess or well is to be generated in the substrate; applying a focused laser beam having a spot size on the first modulation layer such that the first modulation layer is heated, that an opening smaller than the spot size is formed in the first modulation layer, that by exposing the substrate region directly to the focused laser beam through the opening, at least part of substrate material in the substrate region is molten, while the modulation layer and the opening modulate a heat profile generated by the focused laser beam such that an amount of heat reaching the substrate outside the substrate region is restricted; and applying to the substrate region of the substrate a DC electrical voltage sufficient to cause a dielectric breakdown across the substrate region such that the substrate material is ejected from the substrate and that the hole, recess or well is generated in the substrate region of the substrate, wherein the opening has a size defined by heat from the focused laser beam and at least one of a transformation/decomposition threshold of material of the first modulation layer and a thickness of the first modulation layer, and the opening is formed in the first modulation layer and the part of the substrate material is molten before the applying of the DC electrical voltage, and wherein each of the first and second modulation layers is made of a different material from each other.
地址 Chiyoda-ku JP